2N3960UB/TR
ActiveSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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2N3960UB/TR
ActiveSMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3960UB/TR |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 400 mW |
| Supplier Device Package | UB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 12 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 100 | $ 51.70 | |
| Microchip Direct | N/A | 1 | $ 55.67 | |
| Newark | Each (Supplied on Full Reel) | 100 | $ 51.70 | |
| 500 | $ 49.71 | |||
Description
General part information
2N3960UB-Transistor Series
This specification covers the performance requirements for NPN silicon, switching 2N3960 and 2N3960UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500/399. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device packages for the encapsulated device types are as follows: (2N3960) (TO-18) and surfacemount (UB). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/399.
Documents
Technical documentation and resources