Discrete Semiconductor Products

IXTP76P10T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 100 V, 76 A, 0.025 OHM, TO-220AB, THROUGH HOLE

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

IXTP76P10T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 100 V, 76 A, 0.025 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP76P10T

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	197 nC
Input Capacitance (Ciss) (Max) @ Vds	13700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

IXTP76N25T Series

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	FET Type	Supplier Device Package	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTP76N25T	76 A	250 V	MOSFET (Metal Oxide)	460 W	N-Channel	TO-220-3	Through Hole	TO-220-3	10 V	39 mOhm	92 nC	4500 pF	-55 °C	150 °C	30 V
Littelfuse/Commercial Vehicle Products IXTP76P10T	76 A	100 V	MOSFET (Metal Oxide)		P-Channel	TO-220-3	Through Hole	TO-220-3	10 V			13700 pF	-55 °C	150 °C	15 V	298 W	4 V	25 mOhm	197 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 4.77
		50	$ 3.42
		100	$ 3.33
Digikey	Tube	1	$ 6.08
		50	$ 4.86
		100	$ 4.35
		500	$ 3.83
		1000	$ 3.45
		2000	$ 3.23
Newark	Each	1	$ 5.90
		25	$ 4.50
		100	$ 3.42

Description

General part information

IXTP76N25T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching