IXTP76N25T Series

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	FET Type	Supplier Device Package	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTP76N25T	76 A	250 V	MOSFET (Metal Oxide)	460 W	N-Channel	TO-220-3	Through Hole	TO-220-3	10 V	39 mOhm	92 nC	4500 pF	-55 °C	150 °C	30 V
Littelfuse/Commercial Vehicle Products IXTP76P10T	76 A	100 V	MOSFET (Metal Oxide)		P-Channel	TO-220-3	Through Hole	TO-220-3	10 V			13700 pF	-55 °C	150 °C	15 V	298 W	4 V	25 mOhm	197 nC

Catalog

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Key Features

• International Standard Packages

• Low RDS(ON)

• Avalanche rated

• High Current Handling Capability

• Fast Intrinsic Rectifier

Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching