
Discrete Semiconductor Products
MJD3055TF
ObsoleteON Semiconductor
NPN BIPOLAR POWER TRANSISTOR, 10 A, 60 V
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Discrete Semiconductor Products
MJD3055TF
ObsoleteON Semiconductor
NPN BIPOLAR POWER TRANSISTOR, 10 A, 60 V
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD3055TF |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 2 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 1.75 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 8 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NJVMJD3055 Series
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.
Documents
Technical documentation and resources