NJVMJD3055 Series

10 A, 60 V NPN Bipolar Power Transistor

Catalog

10 A, 60 V NPN Bipolar Power Transistor

Part	Power - Max [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor MJD3055TF	1.75 W	150 °C	8 V	Surface Mount	DPAK	2 MHz	60 V	20	50 µA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor MJD3055G	1.75 W		8 V	Surface Mount	DPAK	2 MHz	60 V	20	50 µA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
ON Semiconductor MJD3055T4G	1.75 W		8 V	Surface Mount	DPAK	2 MHz	60 V	20	50 µA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
ON Semiconductor MJD3055	1.75 W		8 V	Surface Mount	DPAK	2 MHz	60 V	20	50 µA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
ON Semiconductor MJD3055RLG	1.75 W		8 V	Surface Mount	DPAK	2 MHz	60 V	20	50 µA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
ON Semiconductor NJVMJD3055T4G	1.75 W		8 V	Surface Mount	DPAK	2 MHz	60 V	20	50 µA	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C

Catalog

10 A, 60 V NPN Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)

• Electrically Similar to MJE2955 and MJE3055

• DC Current Gain Specified to 10 Amperes

• High Current Gain-Bandwidth ProductfT= 2.0 MHz (Min) @ IC= 500 mAdc

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These are PbFree Packages

Description

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.