Specification	RN2308,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2308 Series

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-323(USM)

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Supplier Device Package	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN2308,LF	SC-70 SOT-323	80	500 nA	100 mW	PNP - Pre-Biased	300 mV	22 kOhms	SC-70	Surface Mount	47 kOhms	100 mA	200 MHz	50 V
Toshiba Semiconductor and Storage RN2308(TE85L,F)	SC-70 SOT-323	80	500 nA	100 mW	PNP - Pre-Biased	300 mV	22 kOhms	SC-70	Surface Mount	47 kOhms	100 mA	200 MHz	50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-323(USM)

Technical documentation and resources