Discrete Semiconductor Products

RN2308(TE85L,F)

Active

TRANS PREBIAS PNP 50V 0.1A SC70

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANS PREBIAS PNP 50V 0.1A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	RN2308(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-323(USM)

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Supplier Device Package	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN2308,LF	SC-70 SOT-323	80	500 nA	100 mW	PNP - Pre-Biased	300 mV	22 kOhms	SC-70	Surface Mount	47 kOhms	100 mA	200 MHz	50 V
Toshiba Semiconductor and Storage RN2308(TE85L,F)	SC-70 SOT-323	80	500 nA	100 mW	PNP - Pre-Biased	300 mV	22 kOhms	SC-70	Surface Mount	47 kOhms	100 mA	200 MHz	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-323(USM)

Technical documentation and resources