
Integrated Circuits (ICs)
IS46LQ16128AL-062TBLA2
ActiveISSI, Integrated Silicon Solution Inc
DRAM AUTOMOTIVE (TC: -40 TO +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS
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Integrated Circuits (ICs)
IS46LQ16128AL-062TBLA2
ActiveISSI, Integrated Silicon Solution Inc
DRAM AUTOMOTIVE (TC: -40 TO +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS46LQ16128AL-062TBLA2 |
|---|---|
| Access Time | 3.5 ns |
| Clock Frequency | 1600 MHz |
| Grade | Automotive |
| Memory Format | DRAM |
| Memory Interface | LVSTL |
| Memory Organization | 128M x 16 |
| Memory Size | 2 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 200-TFBGA |
| Qualification | AEC-Q100 |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Technology | SDRAM - Mobile LPDDR4X |
| Voltage - Supply [Max] | 1.17 V, 1.95 V |
| Voltage - Supply [Min] | 1.7 V, 1.06 V |
| Write Cycle Time - Word, Page | 18 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS46LQ16128 Series
SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-TFBGA (10x14.5)
Documents
Technical documentation and resources
No documents available