IS46LQ16128 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
DRAM AUTOMOTIVE (TC: -40 TO +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS
| Part | Technology | Write Cycle Time - Word, Page | Memory Organization | Mounting Type | Memory Type | Memory Interface | Memory Size | Memory Format | Package / Case | Access Time | Clock Frequency | Supplier Device Package | Qualification | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR4X | 18 ns | 128M x 16 | Surface Mount | Volatile | LVSTL | 2 Gbit | DRAM | 200-TFBGA | 3.5 ns | 1600 MHz | 200-TFBGA (10x14.5) | AEC-Q100 | -40 °C | 105 °C | 1.06 V 1.7 V | 1.17 V 1.95 V | Automotive |