Discrete Semiconductor Products

IPP65R110CFDXKSA2

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INFINEON

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 110 MOHM; FAST RECOVERY DIODE

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Discrete Semiconductor Products

IPP65R110CFDXKSA2

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INFINEON

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 110 MOHM; FAST RECOVERY DIODE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R110CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	277.8 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP65R110 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Grade	Qualification
INFINEON IPP65R110CFDXKSA1	150 °C	-55 °C	TO-220-3	20 V	MOSFET (Metal Oxide)	3240 pF	N-Channel	110 mOhm	31.2 A	118 nC	10 V	4.5 V	277.8 W	700 V	PG-TO220-3	Through Hole
INFINEON IPP65R110CFDAAKSA1	150 °C	-40 °C	TO-220-3	20 V	MOSFET (Metal Oxide)	3240 pF	N-Channel	110 mOhm	31.2 A	118 nC	10 V	4.5 V	277.8 W	650 V	PG-TO220-3	Through Hole	Automotive	AEC-Q101
INFINEON IPP65R110CFDXKSA2	150 °C	-55 °C	TO-220-3	20 V	MOSFET (Metal Oxide)	3240 pF	N-Channel	110 mOhm	31.2 A	118 nC	10 V	4.5 V	277.8 W	650 V	PG-TO220-3	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	282	$ 5.90
	Tube	1	$ 7.21
		10	$ 4.89
		100	$ 3.57
		500	$ 3.09

Description

General part information

IPP65R110 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources