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TO-220-3
Discrete Semiconductor Products

IPP65R110CFDXKSA1

Obsolete
INFINEON

MOSFET N-CH 700V 31.2A TO220-3

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TO-220-3
Discrete Semiconductor Products

IPP65R110CFDXKSA1

Obsolete
INFINEON

MOSFET N-CH 700V 31.2A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R110CFDXKSA1
Current - Continuous Drain (Id) @ 25°C31.2 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]118 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3240 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)277.8 W
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V
PartOperating Temperature [Max]Operating Temperature [Min]Package / CaseVgs (Max)TechnologyInput Capacitance (Ciss) (Max) @ Vds [Max]FET TypeRds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]Drive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdPower Dissipation (Max)Drain to Source Voltage (Vdss)Supplier Device PackageMounting TypeGradeQualification
150 °C
-55 °C
TO-220-3
20 V
MOSFET (Metal Oxide)
3240 pF
N-Channel
110 mOhm
31.2 A
118 nC
10 V
4.5 V
277.8 W
700 V
PG-TO220-3
Through Hole
150 °C
-40 °C
TO-220-3
20 V
MOSFET (Metal Oxide)
3240 pF
N-Channel
110 mOhm
31.2 A
118 nC
10 V
4.5 V
277.8 W
650 V
PG-TO220-3
Through Hole
Automotive
AEC-Q101
150 °C
-55 °C
TO-220-3
20 V
MOSFET (Metal Oxide)
3240 pF
N-Channel
110 mOhm
31.2 A
118 nC
10 V
4.5 V
277.8 W
650 V
PG-TO220-3
Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPP65R110 Series

N-Channel 700 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources