
FDME1023PZT
LTBDUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -2.6A, 142MΩ
Deep-Dive with AI
Search across all available documentation for this part.

FDME1023PZT
LTBDUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -2.6A, 142MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDME1023PZT |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 405 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 600 mW |
| Rds On (Max) @ Id, Vgs | 142 mOhm |
| Supplier Device Package | 6-MicroFET |
| Supplier Device Package [x] | 1.6 |
| Supplier Device Package [y] | 1.6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.41 | |
| 10 | $ 0.89 | |||
| 100 | $ 0.59 | |||
| 500 | $ 0.46 | |||
| 1000 | $ 0.42 | |||
| 2000 | $ 0.38 | |||
| Digi-Reel® | 1 | $ 1.41 | ||
| 10 | $ 0.89 | |||
| 100 | $ 0.59 | |||
| 500 | $ 0.46 | |||
| 1000 | $ 0.42 | |||
| 2000 | $ 0.38 | |||
| Tape & Reel (TR) | 5000 | $ 0.34 | ||
| 10000 | $ 0.32 | |||
| 25000 | $ 0.32 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.43 | |
| 6000 | $ 0.40 | |||
| 12000 | $ 0.37 | |||
| 18000 | $ 0.34 | |||
| 30000 | $ 0.33 | |||
Description
General part information
FDME1023PZT Series
This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Documents
Technical documentation and resources