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6-Microfet
Discrete Semiconductor Products

FDME1023PZT

LTB
ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -2.6A, 142MΩ

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6-Microfet
Discrete Semiconductor Products

FDME1023PZT

LTB
ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -2.6A, 142MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDME1023PZT
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C2.6 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs7.7 nC
Input Capacitance (Ciss) (Max) @ Vds405 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]600 mW
Rds On (Max) @ Id, Vgs142 mOhm
Supplier Device Package6-MicroFET
Supplier Device Package [x]1.6
Supplier Device Package [y]1.6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.41
10$ 0.89
100$ 0.59
500$ 0.46
1000$ 0.42
2000$ 0.38
Digi-Reel® 1$ 1.41
10$ 0.89
100$ 0.59
500$ 0.46
1000$ 0.42
2000$ 0.38
Tape & Reel (TR) 5000$ 0.34
10000$ 0.32
25000$ 0.32
NewarkEach (Supplied on Full Reel) 3000$ 0.43
6000$ 0.40
12000$ 0.37
18000$ 0.34
30000$ 0.33

Description

General part information

FDME1023PZT Series

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.