FDME1023PZT Series

Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ

Part	Mounting Type	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDME1023PZT	Surface Mount	1.6	1.6	6-MicroFET	600 mW	MOSFET (Metal Oxide)	2.6 A	6-UFDFN Exposed Pad	405 pF	2 P-Channel	-55 °C	150 °C	1 V	7.7 nC	Logic Level Gate	20 V	142 mOhm

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ

Key Features

• Max rDS(on)= 142 mΩ at VGS= -4.5 V, ID= -2.3 A

• Max rDS(on)= 213 mΩ at VGS= -2.5 V, ID= -1.8 A

• Max rDS(on)= 331 mΩ at VGS= -1.8 V, ID= -1.5 A

• Max rDS(on)= 530 mΩ at VGS= -1.5 V, ID= -1.2 A

• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6Thin

• Free from halogenated compounds and antimony oxides

• HBM ESD protection level > 1600V (Note3)

• RoHS Compliant

Description

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.