Discrete Semiconductor Products

MCPF90N12A-BP

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N-CHANNEL MOSFET,TO-220F

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	MCPF90N12A-BP

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	78 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Micro Commercial Components MCPF90N12A-BP	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Through Hole	72 nC	78 W	4600 pF	TO-220-3 Full Pack	9 mOhm	TO-220F	3 V	120 V	90 A	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 120 V 90A (Tc) 78W Through Hole TO-220F

Technical documentation and resources