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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E040XNTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 180 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) | 950 mW |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2759 | $ 0.74 | |
Description
General part information
RQ6E040XN Series
RQ6E040XN is the low on-resistance MOSFET, built-in G-S protection diode for switching application.
Documents
Technical documentation and resources