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Nch 30V 4A Small Signal MOSFET
Description
AI
RQ6E040XN is the low on-resistance MOSFET, built-in G-S protection diode for switching application.
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Nch 30V 4A Small Signal MOSFET
Nch 30V 4A Small Signal MOSFET
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | N-Channel | 4 A | 2.5 V | 150 °C | 950 mW | 50 mOhm | 3.3 nC | MOSFET (Metal Oxide) | 30 V | Surface Mount | SOT-23-6 Thin TSOT-23-6 | 4 V | 10 V | TSMT6 (SC-95) | 20 V | 180 pF |