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Automotive, AEC-Q101 Series
Discrete Semiconductor Products

PMN15ENEX

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Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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Automotive, AEC-Q101 Series
Discrete Semiconductor Products

PMN15ENEX

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN15ENEX
Current - Continuous Drain (Id) @ 25°C6.4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)667 mW, 7.5 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.30
10$ 0.23
100$ 0.14
500$ 0.13
1000$ 0.09
Digi-Reel® 1$ 0.30
10$ 0.23
100$ 0.14
500$ 0.13
1000$ 0.09
N/A 2830$ 0.71
Tape & Reel (TR) 3000$ 0.09

Description

General part information

PMN15ENE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.