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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Power Dissipation (Max) | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 30 V | 4.5 V 10 V | 14 nC | MOSFET (Metal Oxide) | N-Channel | 6.4 A | 6-TSOP | SC-74 SOT-457 | 7.5 W 667 mW | 20 V | 175 °C | -55 °C | 440 pF | 2.5 V | 24 mOhm |