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PG-TO263-3
Discrete Semiconductor Products

IPB013N06NF2SATMA1

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INFINEON

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 60 V IN D²PAK PACKAGE

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PG-TO263-3
Discrete Semiconductor Products

IPB013N06NF2SATMA1

Active
INFINEON

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 60 V IN D²PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB013N06NF2SATMA1
Current - Continuous Drain (Id) @ 25°C198 A, 40 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]305 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]13800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)3.8 W, 300 W
Rds On (Max) @ Id, Vgs1.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.44
10$ 2.69
100$ 2.14
Digi-Reel® 1$ 4.44
10$ 2.69
100$ 2.14
N/A 1039$ 4.75
Tape & Reel (TR) 800$ 1.75
NewarkEach (Supplied on Cut Tape) 1$ 5.46
10$ 3.98
25$ 3.97
50$ 3.62
100$ 3.28
250$ 3.04
500$ 2.80
1600$ 2.79

Description

General part information

IPB013 Series

Infineon'sStrongIRFET™ 2power MOSFET 60 V features lowest RDS(on)of 1.3 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources