
Discrete Semiconductor Products
IPB013N06NF2SATMA1
ActiveINFINEON
STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 60 V IN D²PAK PACKAGE
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Discrete Semiconductor Products
IPB013N06NF2SATMA1
ActiveINFINEON
STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 60 V IN D²PAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB013N06NF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 198 A, 40 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 305 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 13800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 3.8 W, 300 W |
| Rds On (Max) @ Id, Vgs | 1.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB013 Series
Infineon'sStrongIRFET™ 2power MOSFET 60 V features lowest RDS(on)of 1.3 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Documents
Technical documentation and resources