Specification	NVBG020N120SC1

Current - Continuous Drain (Id) @ 25°C	98 A, 8.6 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2943 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	468 W, 3.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	D2PAK-7
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

NVBG020N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Qualification	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NVBG020N120SC1	4.3 V	220 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	D2PAK-7	3.7 W 468 W	Surface Mount	1200 V	Automotive	-55 °C	175 ░C	28 mOhm	AEC-Q101	2943 pF	N-Channel	-15 V	25 V	8.6 A 98 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 50.09
		10	$ 46.73
		25	$ 44.77
		100	$ 40.58
		250	$ 39.18
	Digi-Reel®	1	$ 50.09
		10	$ 46.73
		25	$ 44.77
		100	$ 40.58
		250	$ 39.18
	Tape & Reel (TR)	800	$ 37.22
Newark	Each (Supplied on Full Reel)	1	$ 35.53
		1	$ 35.53
ON Semiconductor	N/A	1	$ 31.86

Description

General part information

NVBG020N120SC1 Series

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.