NVBG020N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Qualification	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NVBG020N120SC1	4.3 V	220 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	D2PAK-7	3.7 W 468 W	Surface Mount	1200 V	Automotive	-55 °C	175 ░C	28 mOhm	AEC-Q101	2943 pF	N-Channel	-15 V	25 V	8.6 A 98 A

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

Key Features

• 1200V rated

• Qualified for Automotive According to AEC−Q101

• Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A

• High Speed Switching and Low Capacitance

• 100% UIL Tested

• Devices are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.