STPSC6C065DY
LTBAUTOMOTIVE 650 V, 6 A SIC POWER SCHOTTKY DIODE
STPSC6C065DY
LTBAUTOMOTIVE 650 V, 6 A SIC POWER SCHOTTKY DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC6C065DY |
|---|---|
| Capacitance @ Vr, F | 270 pF |
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Qualification | AEC-Q101 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.90 | |
Description
General part information
STPSC6C065-Y Series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.
Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources