JAN1N6639

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DIODE GEN PURP 75V 300MA D-5D

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Discrete Semiconductor Products

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DIODE GEN PURP 75V 300MA D-5D

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6639

Current - Average Rectified (Io)	300 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	D, Axial
Qualification	MIL-PRF-19500/609
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5D
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Qualification	Current - Average Rectified (Io)	Supplier Device Package	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Microchip Technology JANTX1N6639	200 mA 500 ns	100 µA	4 ns	MIL-PRF-19500/609	300 mA	D-5D	Military	175 ░C	-65 C	D Axial	75 V	Standard	Through Hole	1.2 V
Microchip Technology JAN1N6639	200 mA 500 ns	100 nA	4 ns	MIL-PRF-19500/609	300 mA	D-5D	Military	175 ░C	-65 C	D Axial	75 V	Standard	Through Hole	1.2 V
Microchip Technology 1N6639US	200 mA 500 ns	100 nA	4 ns		300 mA	D-5D		175 ░C	-65 C	SQ-MELF D	75 V	Standard	Surface Mount	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	115	$ 5.88

General part information

Diode 75 V 300mA Through Hole D-5D

Technical documentation and resources

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