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TO-252
Discrete Semiconductor Products

SUD23N06-31L-T4BE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 9.1A/21.4A DPAK

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TO-252
Discrete Semiconductor Products

SUD23N06-31L-T4BE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 9.1A/21.4A DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSUD23N06-31L-T4BE3
Current - Continuous Drain (Id) @ 25°C21.4 A, 9.1 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]670 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)5.7 W, 31.25 W
Rds On (Max) @ Id, Vgs31 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.95
10$ 0.77
100$ 0.60
500$ 0.51
1000$ 0.42
Digi-Reel® 1$ 0.95
10$ 0.77
100$ 0.60
500$ 0.51
1000$ 0.42
Tape & Reel (TR) 2500$ 0.41
5000$ 0.38
7500$ 0.36
12500$ 0.35

Description

General part information

SUD23 Series

N-Channel 60 V 9.1A (Ta), 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources