SUD23 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 60V 21.4A TO252

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)
Vishay General Semiconductor - Diodes Division SUD23N06-31-T4-GE3	5.7 W 31.25 W	21.4 A	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	TO-252AA	3 V	17 nC	4.5 V 10 V	31 mOhm	-55 °C	150 °C	Surface Mount	60 V	MOSFET (Metal Oxide)	20 V
Vishay General Semiconductor - Diodes Division SUD23N06-31L-T4BE3	5.7 W 31.25 W	9.1 A 21.4 A	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	TO-252AA	3 V	17 nC	4.5 V 10 V	31 mOhm	-55 °C	150 °C	Surface Mount	60 V	MOSFET (Metal Oxide)	20 V
Vishay General Semiconductor - Diodes Division SUD23N06-31-GE3	5.7 W 31.25 W	21.4 A	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	TO-252AA	3 V	17 nC	4.5 V 10 V	31 mOhm	-55 °C	150 °C	Surface Mount	60 V	MOSFET (Metal Oxide)	20 V
Vishay General Semiconductor - Diodes Division SUD23N06-31-BE3	5.7 W 31.25 W	9.1 A 21.4 A	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	TO-252AA	3 V	17 nC	4.5 V 10 V	31 mOhm	-55 °C	150 °C	Surface Mount	60 V	MOSFET (Metal Oxide)	20 V
Vishay General Semiconductor - Diodes Division SUD23N06-31L-E3	3 W 100 W	23 A	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	TO-252AA	3 V	17 nC	4.5 V 10 V	31 mOhm	-55 °C	175 ░C	Surface Mount	60 V	MOSFET (Metal Oxide)	20 V
Vishay General Semiconductor - Diodes Division SUD23N06-31L-T4-E3	3 W 100 W	23 A	670 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	TO-252AA	3 V	17 nC	4.5 V 10 V	31 mOhm	-55 °C	175 ░C	Surface Mount	60 V	MOSFET (Metal Oxide)	20 V