STB85NF55LT4
ActiveN-CHANNEL 55 V, 0.006 OHM TYP., 80 A STRIPFET(TM) II POWER MOSFET IN D2PAK PACKAGE
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STB85NF55LT4
ActiveN-CHANNEL 55 V, 0.006 OHM TYP., 80 A STRIPFET(TM) II POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB85NF55LT4 |
|---|---|
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4050 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 300 W |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1817 | $ 3.24 | |
Description
General part information
STB85NF55L Series
This Power MOSFET is the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources