Specification	PSMNR90-40YSNX

Current - Continuous Drain (Id) @ 25°C	320 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	189 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10622 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	268 W
Rds On (Max) @ Id, Vgs	0.97 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMNR90-40YSN Series

N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PSMNR90-40YSNX	3.6 V	268 W	Surface Mount	N-Channel	10 V	SC-100 SOT-669	0.97 mOhm	20 V	189 nC	LFPAK56 Power-SO8	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	10622 pF	Schottky Diode (Body)	320 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1086	$ 2.88

Description

General part information

PSMNR90-40YSN Series

ASFET for Battery System applications, characterized by low RDSonand strong SOA capability for reduced I2R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of inrush current during transient and fault conditions.