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SE12DGHM3/I
Discrete Semiconductor Products

SE12DGHM3/I

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3.2A TO263AC

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DocumentsDatasheet
SE12DGHM3/I
Discrete Semiconductor Products

SE12DGHM3/I

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3.2A TO263AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSE12DGHM3/I
Capacitance @ Vr, F90 pF
Current - Average Rectified (Io)3.2 A
Current - Reverse Leakage @ Vr20 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), Variant
QualificationAEC-Q101
Reverse Recovery Time (trr)3 çs
Speed [Min]200 mA, 500 ns
Supplier Device PackageTO-263AC (SMPD)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If [Max]1.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.60
Digi-Reel® 1$ 1.60
N/A 0$ 0.00

Description

General part information

SE12 Series

Diode 400 V 3.2A Surface Mount TO-263AC (SMPD)

Documents

Technical documentation and resources