Discrete Semiconductor Products

SE12DJ-M3/I

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DIODE GEN PURP 600V 3.2A TO263AC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 3.2A TO263AC

Technical Specifications

Parameters and characteristics for this part

Specification	SE12DJ-M3/I

Capacitance @ Vr, F	90 pF
Current - Average Rectified (Io)	3.2 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), Variant
Reverse Recovery Time (trr)	3 çs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	TO-263AC (SMPD)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.15 V

Part	Speed [Min]	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Qualification	Grade
Vishay General Semiconductor - Diodes Division SE12DJ-M3/I	200 mA 500 ns	90 pF	TO-263AC (SMPD)	20 µA	Surface Mount	600 V	175 ░C	-55 °C	Standard	1.15 V	TO-263-3 D2PAK (2 Leads + Tab) Variant	3.2 A	3 çs
Vishay General Semiconductor - Diodes Division SE12DGHM3/I	200 mA 500 ns	90 pF	TO-263AC (SMPD)	20 µA	Surface Mount	400 V	175 ░C	-55 °C	Standard	1.15 V	TO-263-3 D2PAK (2 Leads + Tab) Variant	3.2 A	3 çs	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3.2A Surface Mount TO-263AC (SMPD)

Technical documentation and resources