Discrete Semiconductor Products

STD150NH02L-1

Obsolete

STMicroelectronics

MOSFET N-CH 24V 150A IPAK

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Discrete Semiconductor Products

STD150NH02L-1

Obsolete

STMicroelectronics

MOSFET N-CH 24V 150A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD150NH02L-1

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

STD15 Series

N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package

Part	Package / Case	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STD155N3H6	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	110 W	30 V	3 mOhm	DPAK	MOSFET (Metal Oxide)	175 °C	-55 °C	3650 pF	Surface Mount	20 V	4 V	62 nC	10 V
STMicroelectronics STD150NH02L-1	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	125 W	24 V	3.5 mOhm	IPAK	MOSFET (Metal Oxide)	175 °C	-55 °C		Through Hole	20 V	1.8 V	93 nC	5 V 10 V	4450 pF	150 A
STMicroelectronics STD15N65M5	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	85 W	650 V	340 mOhm	DPAK	MOSFET (Metal Oxide)				Surface Mount	25 V	5 V		10 V	816 pF	11 A	150 °C	22 nC
STMicroelectronics STD15N60DM6	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	110 W	600 V	338 mOhm	TO-252 (DPAK)	MOSFET (Metal Oxide)	150 °C	-55 °C	607 pF	Surface Mount	25 V	4.75 V	15.3 nC			12 A
STMicroelectronics STD15N60M2-EP	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	110 W	600 V	378 mOhm	DPAK	MOSFET (Metal Oxide)	150 °C	-55 °C		Surface Mount	25 V	4 V	17 nC	10 V	590 pF	11 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.18

Description

General part information

STD15 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources