Discrete Semiconductor Products
GAN111-650WSBQ
ActiveNexperia USA Inc.
650 V, 97 MOHM GALLIUM NITRIDE (GAN) FET IN A TO-247 PACKAGE
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Discrete Semiconductor Products
GAN111-650WSBQ
ActiveNexperia USA Inc.
650 V, 97 MOHM GALLIUM NITRIDE (GAN) FET IN A TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GAN111-650WSBQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 336 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 107 W |
| Rds On (Max) @ Id, Vgs | 114 mOhm |
| Supplier Device Package | TO-247-3L |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 141 | $ 13.86 | |
Description
General part information
GAN111-650WSB Series
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Documents
Technical documentation and resources