Specification	SSM6N44FE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	8.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

SSM6N44FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-563(ES6)

Part	Technology	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Current - Continuous Drain (Id) @ 25°C	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6N44FE,LM	MOSFET (Metal Oxide)	SOT-563 SOT-666	ES6	30 V	Logic Level Gate	100 mA	2 N-Channel (Dual)	Surface Mount	8.5 pF	4 Ohm	150 °C	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	68820	$ 0.36

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-563(ES6)

Technical documentation and resources