High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-563(ES6)
| Part | Technology | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Feature | Current - Continuous Drain (Id) @ 25°C | Configuration | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | SOT-563 SOT-666 | ES6 | 30 V | Logic Level Gate | 100 mA | 2 N-Channel (Dual) | Surface Mount | 8.5 pF | 4 Ohm | 150 °C | 1.5 V |