STW25N60M2-EP
ActiveN-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH M2 EP POWER MOSFET IN A TO-247 PACKAGE
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STW25N60M2-EP
ActiveN-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH M2 EP POWER MOSFET IN A TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW25N60M2-EP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1090 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 188 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 552 | $ 4.13 | |
Description
General part information
STW25N60M2-EP Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Documents
Technical documentation and resources