STL21N65M5
ActiveN-CHANNEL 650 V, 175 MOHM TYP., 17 A MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE
STL21N65M5
ActiveN-CHANNEL 650 V, 175 MOHM TYP., 17 A MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL21N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN, 4-PowerVDFN |
| Power Dissipation (Max) | 3 W, 125 W |
| Rds On (Max) @ Id, Vgs | 179 mOhm |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL21 Series
This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.100% avalanche testedLow input capacitance and gate chargeLow gate input resistance
Documents
Technical documentation and resources