Specification	PSMN4R8-100YSEX

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN4R8-100YSE Series

N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN4R8-100YSEX	8290 pF	175 °C	-55 °C	4.8 mOhm	SOT-1023 4-LFPAK	294 W	Surface Mount	N-Channel	100 V	MOSFET (Metal Oxide)	20 V	120 A	120 nC	3.6 V	LFPAK56 Power-SO8	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.35

Description

General part information

PSMN4R8-100YSE Series

N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSonand a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSMN4R8-100YSE complements the latest "hot-swap" controllers ‒ robust enough to withstand substantial inrush currents during turn-on, low RDSonto minimize I2R losses delivering optimum efficiency when turned fully ON and an 80% smaller footprint than existing D2PAK types.