Zenode.ai Logo
HMC8500PM5ETR
RF and Wireless

HMC8500PM5ETR

Active
Analog Devices Inc./Maxim Integrated

10 W (40 DBM), 0.01 GHZ TO 2.8 GHZ, GAN POWER AMPLIFIER

HMC8500PM5ETR
RF and Wireless

HMC8500PM5ETR

Active
Analog Devices Inc./Maxim Integrated

10 W (40 DBM), 0.01 GHZ TO 2.8 GHZ, GAN POWER AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC8500PM5ETR
Current - Supply100 mA
Frequency [Max]2.8 GHz
Frequency [Min]10 MHz
Gain15 dB
Mounting TypeSurface Mount
Noise Figure4.5 dB
Package / Case32-LFQFN Exposed Pad, CSP
RF TypeGeneral Purpose
Supplier Device Package32-LFCSP-CAV (5x5)
Test Frequency [Max]2.8 GHz
Test Frequency [Min]1.3 GHz
Voltage - Supply [Max]32 VDC
Voltage - Supply [Min]24 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 113.171m+

Description

General part information

HMC8500PM5E Series

The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONSExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructuresTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification