HMC8500PM5E Series
10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier
Manufacturer: Analog Devices Inc./Maxim Integrated
Catalog
10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier
| Part | Gain | Noise Figure | RF Type | Test Frequency [Min] | Test Frequency [Max] | Current - Supply | Package / Case | Frequency [Min] | Frequency [Max] | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Analog Devices Inc./Maxim Integrated | 15 dB | 4.5 dB | General Purpose | 1.3 GHz | 2.8 GHz | 100 mA | 32-LFQFN Exposed Pad CSP | 10 MHz | 2.8 GHz | Surface Mount | 24 V | 32 VDC | 32-LFCSP-CAV (5x5) |
Description
AI
The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONSExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructuresTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification