Specification	BSH205G2R

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	418 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	480 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

BSH205G2 Series

20 V, P-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Qualification	Vgs (Max) [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. BSH205G2R	20 V	Surface Mount	MOSFET (Metal Oxide)	480 mW	6.5 nC	170 mOhm	Automotive	P-Channel	2 A	SC-59 SOT-23-3 TO-236-3	150 °C	-55 °C	950 mV	AEC-Q101	8 V	TO-236AB	418 pF	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1042	$ 0.61

Description

General part information

BSH205G2 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.