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20 V, P-channel Trench MOSFET
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Grade | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Qualification | Vgs (Max) [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | Surface Mount | MOSFET (Metal Oxide) | 480 mW | 6.5 nC | 170 mOhm | Automotive | P-Channel | 2 A | SC-59 SOT-23-3 TO-236-3 | 150 °C | -55 °C | 950 mV | AEC-Q101 | 8 V | TO-236AB | 418 pF | 4.5 V |