Discrete Semiconductor Products
NGD8201BNT4G
ObsoleteLittelfuse/Commercial Vehicle Products
N-CHANNEL IGNITION IGBT 2 / TR
Deep-Dive with AI
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Discrete Semiconductor Products
NGD8201BNT4G
ObsoleteLittelfuse/Commercial Vehicle Products
N-CHANNEL IGNITION IGBT 2 / TR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NGD8201BNT4G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 115 W |
| Supplier Device Package | TO-252 (DPAK) |
| Td (on/off) @ 25°C [custom] | - |
| Td (on/off) @ 25°C [custom] | 4 µs |
| Test Condition | 1000 Ohm, 300 V, 6.5 A |
| Vce(on) (Max) @ Vge, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NGD8201BNT4G Series
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive
Documents
Technical documentation and resources