NGD8201BNT4G Series

N-CHANNEL IGNITION IGBT 2

Catalog

N-CHANNEL IGNITION IGBT 2

Part	Supplier Device Package	Test Condition	Power - Max [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Current - Collector Pulsed (Icm)	Input Type
LITTELFUSE NGD8201BNT4G	TO-252 (DPAK)	1 kOhm 6.5 A 300 V	115 W	Surface Mount	175 °C	-55 °C	15 A	1.8 V	430 V	4 µs	-	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 A	Logic

Catalog

N-CHANNEL IGNITION IGBT 2

Description

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive