Discrete Semiconductor Products

NSS40302PDR2G

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ON Semiconductor

BIPOLAR TRANSISTOR ARRAY, COMPLEMENTARY NPN AND PNP, 40 V, 40 V, 3 A, 3 A, 783 MW

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DocumentsDatasheet Technical Data Sheet EN +1

Discrete Semiconductor Products

NSS40302PDR2G

Active

ON Semiconductor

BIPOLAR TRANSISTOR ARRAY, COMPLEMENTARY NPN AND PNP, 40 V, 40 V, 3 A, 3 A, 783 MW

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NSS40302PDR2G

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	180 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	653 mW
Supplier Device Package	8-SOIC
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	115 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

NSS40302PD Series

Low VCE(sat) Transistor, Complementary, 40 V, 3.0 A

Part	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor NSS40302PDR2G	653 mW	115 mV	100 MHz	180 hFE	100 nA	8-SOIC	3.9 mm	0.154 in	8-SOIC	-55 °C	150 °C	3 A	1 NPN 1 PNP	Surface Mount	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.22
		10	$ 0.99
		100	$ 0.77
		500	$ 0.66
		1000	$ 0.53
	Digi-Reel®	1	$ 1.22
		10	$ 0.99
		100	$ 0.77
		500	$ 0.66
		1000	$ 0.53
	Tape & Reel (TR)	2500	$ 0.50
		5000	$ 0.48
		12500	$ 0.46
Newark	Each (Supplied on Cut Tape)	1	$ 1.47
		10	$ 1.11
		25	$ 1.01
		50	$ 0.91
		100	$ 0.80
		250	$ 0.72
ON Semiconductor	N/A	1	$ 0.49

Description

General part information

NSS40302PD Series

ON Semiconductor's e2PowerEdge family of Low VCE(sat)Bipolar Transistors are surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.