NSS40302PD Series

Low VCE(sat) Transistor, Complementary, 40 V, 3.0 A

Catalog

Low VCE(sat) Transistor, Complementary, 40 V, 3.0 A

Part	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor NSS40302PDR2G	653 mW	115 mV	100 MHz	180 hFE	100 nA	8-SOIC	3.9 mm	0.154 in	8-SOIC	-55 °C	150 °C	3 A	1 NPN 1 PNP	Surface Mount	40 V

Catalog

Low VCE(sat) Transistor, Complementary, 40 V, 3.0 A

Key Features

• High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

Description

ON Semiconductor's e2PowerEdge family of Low VCE(sat)Bipolar Transistors are surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.