Discrete Semiconductor Products

DF23MR12W1M1PB11BPSA1

Obsolete

MOSFET MODULES LOW POWER EASY

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET MODULES LOW POWER EASY

Technical Specifications

Parameters and characteristics for this part

Specification	DF23MR12W1M1PB11BPSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	1840 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
INFINEON DF23MR12W1M1B11BOMA1	Module	2000 pF	-40 °C	150 °C	Silicon Carbide (SiC)	2 N-Channel (Dual)	25 A	5.5 V	1.2 kV	1200 V	620 nC	Chassis Mount	AG-EASY1BM-2	45 mOhm
INFINEON DF23MR12W1M1PB11BPSA1	Module	1840 pF	-40 °C	150 °C	Silicon Carbide (SiC)	2 N-Channel (Dual)	25 A	5.55 V	1.2 kV	1200 V		Chassis Mount	AG-EASY1B-2	45 mOhm	62 nC

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General part information

Mosfet Array 1200V (1.2kV) 25A (Tj) Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available