Specification	PMV50UPE,215

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	24 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	66 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	900 mV

PMV50UPE Series

20 V, single P-channel Trench MOSFET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Nexperia USA Inc. PMV50UPE,215	150 °C	-55 °C	Surface Mount	P-Channel	24 pF	66 mOhm	MOSFET (Metal Oxide)	1.8 V	4.5 V	3.2 A	SC-59 SOT-23-3 TO-236-3	8 V	20 V	500 mW	TO-236AB	15.7 nC	900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4721	$ 0.59

Description

General part information

PMV50UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.