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20 V, single P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 °C | -55 °C | Surface Mount | P-Channel | 24 pF | 66 mOhm | MOSFET (Metal Oxide) | 1.8 V | 4.5 V | 3.2 A | SC-59 SOT-23-3 TO-236-3 | 8 V | 20 V | 500 mW | TO-236AB | 15.7 nC | 900 mV |