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BYV25G-600,127
Discrete Semiconductor Products

BYV25G-600,127

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WeEn Semiconductors

DIODE GEN PURP 600V 5A I2PAK

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BYV25G-600,127
Discrete Semiconductor Products

BYV25G-600,127

Active
WeEn Semiconductors

DIODE GEN PURP 600V 5A I2PAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV25G-600,127
Current - Average Rectified (Io)5 A
Current - Reverse Leakage @ Vr50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Reverse Recovery Time (trr)60 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-262 (I2PAK), I2PAK (TO-262)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.37
1000$ 0.63
Tube 6000$ 0.39

Description

General part information

BYV25 Series

Diode 600 V 5A Through Hole TO-262 (I2PAK)

Documents

Technical documentation and resources

No documents available