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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STTH812G

Obsolete
STMicroelectronics

DIODE GEN PURP 1.2KV 8A D2PAK

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DocumentsDatasheet
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STTH812G

Obsolete
STMicroelectronics

DIODE GEN PURP 1.2KV 8A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH812G
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr8 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Speed500 ns, 200 mA
Supplier Device PackageD2PAK
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.92

Description

General part information

STTH812 Series

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

Documents

Technical documentation and resources