STB34N50DM2AG
ObsoleteAUTOMOTIVE-GRADE N-CHANNEL 500 V, 0.10 OHM TYP., 26 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE
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STB34N50DM2AG
ObsoleteAUTOMOTIVE-GRADE N-CHANNEL 500 V, 0.10 OHM TYP., 26 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB34N50DM2AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 190 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 5.89 | |
Description
General part information
STB34N50DM2AG Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources
No documents available